Atomic Scale Observations of Metal-Induced Gap States at h222j MgOyCu Interfaces

نویسندگان

  • D. A. Muller
  • D. A. Shashkov
  • R. Benedek
  • L. H. Yang
  • J. Silcox
  • D. N. Seidman
چکیده

D. A. Muller,1,2 D. A. Shashkov,3 R. Benedek,3 L. H. Yang,4 J. Silcox,1 and D. N. Seidman3 1School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 2Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 3Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 4Condensed Matter Physics Division, Lawrence Livermore National Laboratory, Livermore, California 94551 (Received 9 October 1997)

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Low-temperature formation of metal/molecular-beam epitaxy

We report soft x-ray photoemission studies of metal/molecular-beam epitaxy (MBE)GaAs(lOO) interfaces formed at low temperature. Our results indicate that rectifying barrier heights are proportional to the metal work function in accordance with Schottky's original description of metal-semiconductor contacts. These results confirm the predictions of a selfconsistent model of metal-semiconductor i...

متن کامل

Interface states and Schottky barrier formation at metal/GaAs junctions

We report results of x-ray photoemission and cathodoluminescence spectroscopies studies of interface formation at metal-GaAs junctions. The results are interpreted by using a microscopic model of metal-semiconductor interfaces. Our low-temperature measurements and analyses show the validity of Schottky'S phenomenological description, thereby suggesting that metalinduced gap states and native de...

متن کامل

Excited states at interfaces of a metal-supported ultrathin oxide film

We report layer-resolved measurements of the unoccupied electronic structure of ultrathin MgO films grown on Ag(001). The metal-induced gap states at the metal/oxide interface, the oxide band gap, and a surface core exciton involving an image-potential state of the vacuum are revealed through resonant Auger spectroscopy of the Mg KL23L23 Auger transition. Our results demonstrate how to obtain n...

متن کامل

Metal induced gap states and Schottky barrier heights at non–reactive GaN/noble metal interfaces

We present ab-initio local density FLAPW calculations on non–reactive N– terminated [001] ordered GaN/Ag and GaN/Au interfaces and compare the results (such as metal induced gap states and Schottky barrier heights) with those obtained for GaN/Al, in order to understand the dependence of the relevant electronic properties on the deposited metal. Our results show that the density of gap states is...

متن کامل

The Role of Interface States in Controlling the Electronic Structure of Alq 3 /reactive Metal Contacts

Gap states induced by the formation of metal/organic interfaces have been observed in a number of instances. Yet, the role that these states play in determining the electronic structure of the interface and the carrier injection barriers has not been clearly established. In this paper, we provide a model for the role of chemistry-induced gap states at Mg/ Alq 3 and Al/Alq 3 interfaces, in parti...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1998